Roughened polysilicon surface capacitor electrode plate for high denity dram
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United States of America Patent
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May 5, 1992
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N/A
app pub date -
Jul 10, 1991
filing date -
Jul 10, 1991
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Abstract
A method of fabricating a microminaturized capacitor having an electrode that is roughened to increase the effective area per unit area and resulting structure, particularly adapted for use in high density dynamic random access memory devices. The method involves depositing a conductive polycrystalline silicon layer. The depositing a metal such as a refractory metal over the polysilicon layer. The composite layer is heated to form a metal silicide and roughened polycrystalline silicon surface while the grains also grow large. The metal silicide is removed, leaving a roughened surface. The capacitor dielectric layer is deposited upon the roughened surface. The second conductive polycrystalline silicon layer is now formed upon said dielectric layer to complete the capacitor.
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