Method of manufacturing a silicon carbide-based material

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United States of America Patent

PATENT NO 5108965
SERIAL NO

07747499

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Abstract

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A composition of raw materials comprising silicon carbide, a substance containing at least one of Group IVa to VIa elements except any boride thereof, and a substance containing boron except any of the borides of Group IVa to VIa elements, and further containing, if required, carbon, or an organic compound which produces carbon as a result of thermal decomposition, or both, is fired to manufacture a silicon carbide-based material in which a boride of at least one of the elements of Groups IVa to VIa of the periodic table is dispersed. The silicon carbide-based material can be manufactured without using any of the borides of Group IVa to VIa elements as a starting material.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA KOURANSHASAGA-KEN 844

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tani, Toshihiko Aichi, JP 18 452
Wada, Shigetaka Mie, JP 15 295

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