Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharges
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United States of America Patent
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Apr 21, 1992
Issued Date -
N/A
app pub date -
Feb 5, 1991
filing date -
Sep 18, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A process is described for the formation of high temperature superconducting materials from perovskites by inductively coupled plasma assisted oxidation. An inductively coupled plasma reactor is used to oxidize oxygen deficient perovskites in less time and at lower temperatures than previously possible. High power densities are created within the plasma reactor. This is thought to contribute to the rapid and low temperature phase change during oxidation from tetragonal to orthorhombic crystal structure apparently required for superconductivity at temperatures greater than approximately 77.degree. K. The low temperature and rapid processing time permits the application of conventional lithographic semiconductor manufacturing techniques to be applied to the potentially high temperature superconducting perovskite materials.
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