Structure for a substrate tap in a bipolar structure
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United States of America Patent
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Apr 14, 1992
Issued Date -
N/A
app pub date -
Dec 28, 1990
filing date -
Dec 28, 1988
priority date (Note) -
Expired
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Abstract
A substrate tap is incorporated in an integrated circuit which comprises a plurality of transistors formed in isolated device regions in a substrate material comprising a layer of N-type material over a layer of P-type material. The isolated device regions are defined by isolating slots extending down through said N-type material and into the P-type material. The trench for each substrate tap extend down to said P-type material and has an oxide layer lining the sidewalls of trench, a doped polysilicon layer covering the sides and bottom of said trench, and a doped implant or diffused region formed at the base of and in contact between the tap and the substrate. The substrate beneath the devices is connected to a negative potential to isolate the devices on said substrate. Preferably, the substrate tap includes a silicide layer formed over said polysilicon layer to enhance contact to said doped implant region.
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