Method of fabricating high-density interconnect structures having tantalum/tantalum oxide layers
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United States of America Patent
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Mar 24, 1992
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N/A
app pub date -
May 7, 1990
filing date -
May 7, 1990
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Expired
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Abstract
A method of fabricating a high-density multilayer copper/polyimide interconnect structure utilizing a blanket tantalum/tantalum oxide layer that electrically connects all of the electroplating seed layers to the edge of the substrate; upon completion of the electroplating process, the excess tantalum/tantalum oxide layer is etched off to produce isolated conductor lines. A multilayer copper/polyimide interconnect structure may be fabricated by repeating this fabrication sequence for each layer.
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