Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns
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United States of America Patent
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Mar 17, 1992
Grant Date -
N/A
app pub date -
Jun 19, 1989
filing date -
Jun 28, 1988
priority date (Note) -
Expired
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Abstract
The present invention relates to a method for polishing a silicon wafer. The method comprises the steps of: (a) supplying a polishing fluid to a polishing surface, the polishing fluid including an alkaline fluid and polishing particles of high-purity silica dispersed in the alkaline fluid, the polishing surface being planar; (b) bringing a silicon wafer in contact with the polishing surface; and (c) moving at least one of the silicon wafer and the polishing surface relative to the other, thereby polishing the silicon wafer. The method is characterized by the following: the polishing surface is made of a ceramic material harder than the silicon wafer and more resistant to mechanochemical polishing than silicon, and the maximum roughness of the ceramic is less than 0.02 .mu.m.
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