Method for manufacturing bipolar transistor by selective epitaxial growth of base and emitter layers
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United States of America Patent
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Mar 17, 1992
Grant Date -
N/A
app pub date -
Aug 24, 1989
filing date -
Aug 25, 1988
priority date (Note) -
Expired
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Abstract
The invention relates to a method in particular for manufacturing bipolar transistors. By applying selective epitaxy methods and by using self-adjusting techniques, the process sequence is shortened and the transistor properties are improved.
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