Method of fabricating infrared detectors and the detector
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United States of America Patent
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Mar 10, 1992
Grant Date -
N/A
app pub date -
Sep 24, 1990
filing date -
Sep 24, 1990
priority date (Note) -
Expired
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Abstract
A method of fabricating an infrared detector and the detector comprising providing a semiconductor layer of group II-VI material, providing an electrically insulating layer having vias therethrough at predetermined locations and having a coefficient of thermal expansion which substantially tracks the coefficient of thermal expansion of said layer, securing the semiconductor layer to the insulating layer, forming infrared detector elements on the semiconductor layer and vias through the semiconductor layer aligned with the vias through the insulating layer, securing the combined semiconductor and insulating layers to the surface of a signal processing semiconductor chip and forming electrical interconnects between the detector elements and the chip through the vias. Also, there is provided an attaching agent securing the chip to the insulating layer, the attaching agent being sufficiently strong to retain the attachment during thermal cycling during processing and receiving thermally caused stresses between the chip and the detector elements.
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