Sintered silicon carbide body with high thermal conductivity and process of producing the same
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United States of America Patent
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Mar 10, 1992
Grant Date -
N/A
app pub date -
Nov 6, 1989
filing date -
Jan 30, 1989
priority date (Note) -
Expired
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Abstract
Disclosed is a sintered silicon carbide body with a high thermal conductivity which has a thermal conductivity of not less than 150 W/m.multidot.K, which is produced by (a) mixing (1) a first silicon carbide powder having a mean grain size of from 0.1 to 10 .mu.m with (2) a second silicon carbide powder having a mean grain size of not greater than 0.1 .mu.m prepared by (2-1) introducing a starting gas composed of a silane compound or silicon halide and a hydrocarbon into a plasma of a non-oxidative atmosphere, and (2-2) conducting gas phase reaction between the silane compound or silicon halide and the hydrocarbon while controlling the pressure of the reaction system within the range of from less than 1 atom to 0.1 torr, and (3) optionally, a carbon powder which is required for reducing oxides contained in both the first and second silicon carbide powders, (b) optioanlly reducing the oxides with the carbon, and (c) heating the resulting mixture for sintering. Also, processes of producing the same are disclosed.
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