Suppression of water vapor absorption in glass encapsulation
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United States of America Patent
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Mar 10, 1992
Issued Date -
N/A
app pub date -
Jun 25, 1991
filing date -
Oct 12, 1990
priority date (Note) -
Expired
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Abstract
A method for encapsulation of an integrated circuit array that suppresses or eliminates absorption and subsequent out-gassing of water vapor and suppresses or eliminates out-gassing of toxic constituents of the encapsulation layer such as trimethyl borate. A first layer of borophosphosilicate glass is deposited on the integrated circuit array, followed immediately by deposit of a thin cap layer of undoped oxide of silicon. The method also allows use of boron and phosphorous concentrations in the borophosphosilicate glass as high as 9 weight percent with no loss of stability of that layer, before or after thermal treatment. Reflow processing temperatures as low as T.sub.r =700.degree.-900.degree. C. may be used here. Alternatively, silicon nitride can replace the silicon oxide in the cap layer, using either a high temperature process or a lower temperature plasma-enhanced process.
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