Method of manufacturing ITO sputtering target
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United States of America Patent
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Mar 10, 1992
Grant Date -
N/A
app pub date -
Nov 21, 1990
filing date -
Jan 8, 1990
priority date (Note) -
Expired
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Abstract
In manufacturing a high-density ITO sputtering target by press-molding a powder mixture consisting essentially of indium oxide and tin oxide is compacted and the resulting compact is sintered. The sintering is performed in an atmosphere of oxygen under a pressure of at least one atmosphere (gauge pressure). The present invention offers very advantageous effects from the industrial viewpoint in that it permits mass production of high-performance, high-density ITO targets at low cost using mass productivity.
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