Method of alignment for semiconductor memory device
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Mar 3, 1992
Grant Date -
N/A
app pub date -
Nov 28, 1988
filing date -
Nov 28, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A semiconductor memory cell with an N-type conductivity capacitance implant region self-aligned with a polysilicon transfer gate is disclosed. In a first embodiment after a blanket capacitance implant, formation of the capacitance storage polysilicon gate and an overlying insulating layer, a plasma etch is used to define specific regions of the capacitance implant. In a second embodiment, a complementary implant step is used after formation of the insulating layer over the capacitance storage polysilicon gate. Subsequently, in both embodiments, a transfer gate is formed with an edge surface adjacent to and abutting the insulating layer over the capacitance storage gate and substantially aligned with an edge surface of the capacitance implant region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully