Plasma CVD process for coating a basic tool body
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United States of America Patent
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Mar 3, 1992
Grant Date -
N/A
app pub date -
Dec 11, 1989
filing date -
Dec 10, 1988
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Expired
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Abstract
A plasma-activated CVD process provides improved adhesion of the coated surface layers and employs, as the plasma exciting source, a pulsed direct voltage and a residual direct voltage which remains during the pulse intervals. The residual direct voltage is equal to or greater than the lowest ionization potential of the gases participating in the CVD process, but is no more than 50% of the maximum value of the pulsed direct voltage. The total thickness of the layer(s) does not exceed 30 .mu.m and the temperature of the basic tool body during the coating process is reduced, compared to prior art plasma CVD processes, and ranges from between 400.degree. to 800.degree. C., and is preferably kept below 600.degree. C.
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