Production of ion beams by chemically enhanced sputtering of solids
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United States of America Patent
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Feb 18, 1992
Grant Date -
N/A
app pub date -
Feb 14, 1989
filing date -
Feb 14, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for producing an ion beam for ion implantation by chemically enhanced bombardment of solids. The method is carried out in a reaction chamber having an anode and cathode and a cathode liner rich in a selected element, namely boron, arsenic, phosphorus or antimony. A non-poisonous feed gas is introduced into the reaction chamber and energy is supplied to the feed gas to generate a plasma in the reaction chamber. The constituents of the plasma react chemically with the selected element in the cathode liner and an electrical potential is established between the anode and the cathode so that ions in the plasma bombard the cathode liner. The chemical reaction and bombardment together generate an ion species in the plasma containing the selected element. A beam of ions containing the selected species is then extracted from the plasma.
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- 32 Citation Count
- C23C Class
- 0 % this patent is cited more than
- 33 Age