MOSFET and fabrication method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 11, 1992
Grant Date -
N/A
app pub date -
Aug 21, 1989
filing date -
Aug 24, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of fabricating a MOSFET wherein sidewall spacers are provided adjacent the gate of the MOSFET, the method including the steps of providing an insulating layer which extends over the source, drain and gate of the MOSFET and which acts as an impurity diffusion barrier; and forming on the insulating layer sidewall spacers which are composed of an insulating material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully