Quantum well semiconductor laser
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United States of America Patent
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-
Jan 14, 1992
Grant Date -
N/A
app pub date -
Jul 2, 1990
filing date -
Jul 4, 1989
priority date (Note) -
Expired
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Abstract
The quantum well semiconductor laser has at least one ultrafine layer with a thickness smaller than the critical thickness, the material of which is isoelectronic with that of the well.
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