Method of preventing dislocation multiplication of bulk HgCdTe and LPE films during low temperature anneal in Hg vapor
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United States of America Patent
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Jan 7, 1992
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N/A
app pub date -
Aug 24, 1990
filing date -
Aug 24, 1990
priority date (Note) -
Expired
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Abstract
The disclosure relates to a method of forming samples of alloys of group II-VI compositions having minimum dislocations, comprising the steps of providing a sample of a group II-VI compound, providing an enclosed ampoule having the sample at one end portion thereof and a group II element of the compound at an end portion remote from the one end portion, heating the sample to a temperature in the range of 350 to the melting temperature of the compound for about one hour while maintaining the group II element at a temperature more than 200.degree. C. below the sample temperature, heating the group II element to a temperature from about 5.degree. to about 50.degree. C. below the temperature of the sample while maintaining the sample at a temperature in the range of 350.degree. to 650.degree. C. both of about 15 minutes to about 4 hours, and then stoichiometrically annealing the sample at a temperature below 325.degree. C.
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