Process for the manufacture of short circuits on the anode side of thyristors
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United States of America Patent
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-
Jan 7, 1992
Grant Date -
N/A
app pub date -
Dec 18, 1990
filing date -
Dec 19, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Short circuits on the anode side of thyristors can be manufactured easily d inexpensively if a p-doped layer is first generated on the anode side. On it, after an oxide masking and structuring process, grooves (7) are produced, which extend into the base zone (1) of the thyristor on the anode side, in which the short-circuit areas are then generated. After the oxide has been removed, the anode electrode is applied, which contacts the p-doped layer and the short-circuit areas. As an alternative, the short-circuit areas may also be generated first through the openings of a structured oxide. Then, after removal of the oxide, the entire surface is p-doped, with the doping being less than that of the short-circuit areas. Then the anode electrode is applied.
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