Tungsten silicide self-aligned formation process
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United States of America Patent
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Dec 24, 1991
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N/A
app pub date -
Sep 8, 1989
filing date -
Sep 9, 1988
priority date (Note) -
Expired
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Abstract
A process for forming tungsten or molybdenum silicide on silicon apparent regions (6) of a silicon wafer surface (1) also comprising oxidized regions (2) includes the steps consisting in uniformly coating the wafer with a tungsten or molybdenum layer (10) and annealing at a temperature ranging from 700.degree. C. to 1000.degree. C. The annealing step is carried out in presence of a low pressure gas forming a chemical composite with tungsten or molybdenum. The composite is then selectively etched.
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