Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
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United States of America Patent
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Dec 10, 1991
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N/A
app pub date -
Dec 27, 1988
filing date -
Dec 27, 1988
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Expired
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Abstract
Power MOSFET apparatus, and method for its production, that suppresses voltage breakdown near the gate, using a polygon-shaped trench in which the gate is positioned in order to suppress oxide dielectric breakdown, using a shaped deep body junction that partly lies below the trench bottom to force voltage breakdown away from the trench surfaces and into the bulk of the semiconductor material, and using special procedures for growth of gate oxide at various trench corners.
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