DRAM memory cell with tapered capacitor electrodes
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 26, 1991
Grant Date -
N/A
app pub date -
May 2, 1990
filing date -
May 2, 1990
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A DRAM cell structure having a capacitance electrode with a tapered end surface is disclosed. The tapered end surface eliminates prior art structures formed during fabrication of the cell structure that decreased yield. The cell structure of this invention provides increased yield without increasing the number of process steps required to form the cell structure. A unique process for forming the capacitance electrode with a tapered end surface is also provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully