Method of manufacturing a light emitting element
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United States of America Patent
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Nov 26, 1991
Grant Date -
N/A
app pub date -
Mar 25, 1988
filing date -
Mar 27, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A blue light emitting diode which has a multiple layer structure and is grown on a semiconductor crystalline substrate, wherein zinc of a group II element of the periodic table, lithium, sodium, or potassium of group VI elements are used. These elements and their compounds are used as impurities to be introduced into the construction when it is at the condition of vapor growing. A blue light emitting diode has a pair of Ohmic electrodes, an n-type semiconductor layer and a p-type semiconductor layer. These layers are grown from a vapor phase on the substrate and sandwiched between the electrodes.
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