Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone
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United States of America Patent
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Nov 5, 1991
Grant Date -
N/A
app pub date -
Jun 10, 1988
filing date -
Sep 30, 1986
priority date (Note) -
Expired
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Abstract
A semiconductor element having a p-zone on the anode side and an adjacent weakly doped n-zone which forms a blocking pn-junction with the p-zone, particularly a fast rectifier diode and a fast thyristor. To realize improved recovery behavior during commutation and good forward conduction and blocking characteristics in such components, the semiconductor element is configured in such a manner that the p-zone on the anode side includes an electron sink formed by a pn-junction formed of this zone and the adjacent n-zone; moreover, the thickness and the doping concentration of the region of the anode-side p-zone between the electron sink (S) and the pn-junction are selected in such a manner that the region of high injected charge carrier concentration under forward load extends close to the electron sink while, under a forward blocking load, the space charge zone in the p-zone does not extend to the electron sink.
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