Method of fabricating a thin-film transistor
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United States of America Patent
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Oct 29, 1991
Issued Date -
N/A
app pub date -
Aug 28, 1989
filing date -
Oct 4, 1985
priority date (Note) -
Expired
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Abstract
A thin-film transistor comprises a source electrode and a drain electrode formed in a spaced-apart relation to each other on a substrate, a semiconductor layer formed over the source and drain electrodes, a gate insulating film formed on the semiconductor layer and a gate electrode on the gate insulating film. First and second ohmic contact layers are formed in the entirety of the surface regions of the semiconductor layer which are in contact with the source and drain electrodes.
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