Method of producing p-type amorphous silicon carbide and solar cell including same
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United States of America Patent
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Oct 29, 1991
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N/A
app pub date -
Sep 18, 1989
filing date -
Oct 7, 1988
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Expired
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Abstract
A method of producing a p-type hydrogenated amorphous silicon carbide thin film comprising the steps of preparing a raw material gas mixture consisting of a silicon compound, a hydrocarbon or a fluocarbon, and a boron compound, diluting the raw material gas mixture with hydrogen gas, and decomposing the raw material gas mixture by glow discharge to achieve a resultant film having a prescribed value of photoconductivity with a reduced optical absorption coefficient.
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