Basic cell for BiCMOS gate array
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United States of America Patent
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Oct 8, 1991
Grant Date -
N/A
app pub date -
May 15, 1990
filing date -
May 15, 1990
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An improved cell for use in a mask programmable gate array is disclosed herein. The preferred cell comprises two compute sections, each comprising two pairs of medium size P and N-channel transistors, two small N-channel transistors, and a single small P-channel transistor. Each cell also comprises a high efficiency drive section containing a single bipolar pull-up transistor, a large N-channel pull-down transistor, and a small P-channel transistor. By using this cell, an extremely high compute capability per die area is achieved.
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