Sub-micron bipolar devices with sub-micron contacts
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United States of America Patent
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Sep 24, 1991
Issued Date -
N/A
app pub date -
May 25, 1990
filing date -
Jul 15, 1987
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Expired
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Abstract
The sub-micron bipolar devices with method for forming sub-micron contacts provides a sub-micron bipolar device and process for manufacturing it with contacts down to 0.1 microns or less. All processes and devices utilize doped polysilicon as the electrodes for the device elements, and the preferred embodiment surrounds the polysilicon contacts with low temperature oxide covered by SOG to avoid all oxidation steps which otherwise might be detrimental to the extremely thin whisker contacts.
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