Method and apparatus for forming resist pattern
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United States of America Patent
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Sep 24, 1991
Issued Date -
N/A
app pub date -
Nov 27, 1989
filing date -
Jan 19, 1983
priority date (Note) -
Expired
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Abstract
A method for forming a highly precise resist pattern with good reproducibility has the steps of: applying a resist material to a substrate to form a resist film; baking the resist film; cooling the resist film in a controlled manner; selectively irradiating the resist film with one of electromagnetic waves in a predetermined wavelength range and particle beam having predetermined energy; and developing the resist film to form a resist pattern.
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