Dual oxide channel stop for semiconductor devices
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United States of America Patent
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Aug 27, 1991
Issued Date -
N/A
app pub date -
Jun 1, 1990
filing date -
May 3, 1984
priority date (Note) -
Expired
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Abstract
The disclosure relates to oxide-semiconductor interfaces which are grown with varying amounts of fixed positive (or negative) charge. The invention utilizes these different values to form a channel stop for a charge transfer device. For HgCdTe two different oxides are used, namely, those produced by wet anodization (having large values of fixed positive charge) and plasma oxidation (having low values of fixed charge). The voltage range of operation of the active gate is determined by the difference in fixed positive charge for these regions and the insulator thicknesses.
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