Pre-processing wafer for the output currents of detection diodes subjected to thermal radiation
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United States of America Patent
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Aug 20, 1991
Grant Date -
N/A
app pub date -
Oct 25, 1989
filing date -
Oct 25, 1988
priority date (Note) -
Expired
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Abstract
A wafer is provided for pre-processing the output currents of detection diodes subjected to thermal radiation, comprising an input stage for integrating the output currents of the diodes and an output stage delivering a signal related the incident radiation by a transfer function. It also comprises transistors for compressing the transfer function, the transistors conducting beyond a shunt threshold current less than a clipping threshold current and having a conduction resistance such as to shunt only a part of the integrated charges.
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