Method of coating silicon particles
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United States of America Patent
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Aug 20, 1991
Grant Date -
N/A
app pub date -
Dec 13, 1989
filing date -
Dec 21, 1988
priority date (Note) -
Expired
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Abstract
An apparatus for heating polycrystalline silicon, in which polycrystalline silicon of semiconductor grade placed in the reaction vessel is directly heated by means of a heater outside of the reaction vessel where the inner surface of the reaction vessel is formed of graphite coated with highly pure silicon and having a thickness of 100 microns or more.
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