Method for growing silicon single crystal
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United States of America Patent
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Aug 6, 1991
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N/A
app pub date -
May 26, 1989
filing date -
May 31, 1988
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Expired
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Abstract
A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.
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