Ion implantation capable of uniformly injecting an ion beam into a substrate
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United States of America Patent
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Jul 9, 1991
Grant Date -
N/A
app pub date -
Nov 21, 1989
filing date -
Nov 21, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In an ion implantation apparatus for injecting an ion beam into a substrate at a controllable incident angle, the substrate (13a) is supported by a supporting section which comprises a disc shaped plate (13) for locating the substrate thereon and an injecting chamber (11) for disposing the disc shaped plate therein. The substrate is irradiated by the ion beam. The ion implantation apparatus comprises a first controlling section (20, 23) and a second controlling section (34). The first controlling section controls the supporting section so as to change a location of the substrate in relation to the ion beam. The second controlling section controls supporting section so as to change the controllable incident angle relative to the ion beam.
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