Cantilevered microtip manufacturing by ion implantation and etching
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United States of America Patent
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Jun 25, 1991
Grant Date -
N/A
app pub date -
Jan 22, 1990
filing date -
Jan 22, 1990
priority date (Note) -
Expired
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Abstract
A method for fabricating a microtip, cantilevered from a base and having a controllably high aspect ratio, for use in microprobe microscopy to probe variations in materials at the atomic level. A two-layer semiconductor material structure is provided, one layer being n type and the other layer being p type. A thin pencil of ions of n type is implanted through the n type layer into the p type layer, through a small aperture in a mask layer that overlies the n type layer. The p type material is then etched away, leaving the n type ion profile and the n type layer as a cantilevered microtip. The n type semiconductor layer may be replaced by a layer of any material that resists etching by the selected etchant.
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