Microwave plasma etching method and apparatus
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United States of America Patent
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May 7, 1991
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N/A
app pub date -
Mar 21, 1990
filing date -
Mar 27, 1989
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Expired
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Abstract
A microwave plasma etching method and apparatus for manufacturing electronic devices such as transistors. The method includes the steps of forming a stream of plasma from a processing gas within a plasma formation chamber by using an electric field produced by a microwave and an electron cyclotron resonance phenomenon produced by a magnetic field perpendicular to the electric field, and processing a substrate surface by locating it at the electron cyclotron resonance point and exposing it to a radiation of the plasma stream. The apparatus has a plasma formation chamber, a microwave introducing device connected to the plasma formation chamber, a magnetic field applying device for producing a magnetic field perpendicular to an electric field produced within the plasma formation chamber, and a gas introducing system for introducing a processing gas into the plasma formation chamber. A substrate holder is provided within the plasma formation chamber for holding a substrate at a resonance point of the electron cyclotron resonance phenomenon exhibited by the introduced microwave and applied magnetic field where the magnetic field has a particular strength.
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