Anisotropic etch method for a sandwich structure
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United States of America Patent
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May 7, 1991
Grant Date -
N/A
app pub date -
May 29, 1990
filing date -
May 29, 1990
priority date (Note) -
Expired
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Abstract
A plasma etch process to anisotropically etch a sandwich structure of silicon dioxide, polycrystalline silicon, and silicon dioxide 'in situ', that is, in a single etch chamber. The silicon dioxide is etched using a SF.sub.6 /CHF.sub.3 /He chemistry. The polycrystalline silicon is etched using a HBr/He chemistry. A non-erodible cathode is used. Tungsten silicide may replace the polycrystalline silicon. Silicon nitride may replace the silicon dioxide.
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