Method of producing silicon carbide-based bodies
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 16, 1991
Grant Date -
N/A
app pub date -
Nov 3, 1989
filing date -
Nov 10, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Silicon carbide-based bodies are produced by forming a porous compact of silicon carbide, a carbide of a metal, and carbon, and infiltrating the compact with a molten mixture comprising the metal and silicon. The metal may be selected from: titanium, zirconium, hafnium, molybdenum, niobium, tantalum, tungsten, and vanadium, and the infiltration temperature may be between 1900.degree. C. and 2100.degree. C.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully