Method for making an alternation of layers of monocrystalline semiconducting material and layers of insulating material
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United States of America Patent
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Mar 12, 1991
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N/A
app pub date -
Apr 4, 1989
filing date -
Apr 5, 1988
priority date (Note) -
Expired
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Abstract
In a method for the fabrication of a layer of a monocrystalline semiconducting layer on a layer of insulating material, an epitaxial growth is achieved in a cavity closed by layers of dielectric material, using a seed of monocrystalline semiconducting material of a substrate. The growth takes place first of all, vertically, perpendicularly to the seed, and then horizontally in the plane of the cavity. This method thus enables a three-dimensional integration of semiconductor components.
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