High-speed and high-density semiconductor memory
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United States of America Patent
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Feb 19, 1991
Issued Date -
N/A
app pub date -
Aug 17, 1987
filing date -
Feb 21, 1977
priority date (Note) -
Expired
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Abstract
A multiplicity of field effect type semiconductor memory elements are formed perpendicular to a surface of a semiconductor wafer. Charge carriers are transported in the semiconductor bulk perpendicular to the surface and a potential barrier is formed in the current path to accomplish storing. Since the bulk mobility of a semiconductor is far larger than the surface mobility, the transit time of the carriers is much improved. Furthermore, since each structure of the memory cells is formed perpendicular to the semiconductor surface, the surface occupation area per memory cell is reduced. Thus, a high-speed and high-density semiconductor memory device is provided.
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