Insulated gate static induction transistor and integrated circuit including same
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United States of America Patent
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Feb 19, 1991
Issued Date -
N/A
app pub date -
Jul 29, 1988
filing date -
Jan 11, 1977
priority date (Note) -
Expired
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Abstract
An insulated-gate static induction transistor is formed by establishing a potential barrier in a semiconductor region of one conductivity type between the source and the drain regions of the other conductivity type. The height of the potential barrier should be sensitive to the drain voltage as well as to the gate voltage. Therefore, the semiconductor region should have a low impurity concentration and short length. The potential barrier can be established by varying the field effect of the gate voltage in the semiconductor region and/or by the built-in potential between the source region and the semiconductor region.
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