High-power FET circuit
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United States of America Patent
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Feb 12, 1991
Grant Date -
N/A
app pub date -
Feb 21, 1989
filing date -
Feb 21, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A power FET includes a substrate of semi-insulating material having a top side and a ground side; an FET fabricated on the ground side of the substrate; and conductor means in the substrate extending from the drain electrode and the gate electrode on the ground side to the top side of the substrate. A ground plane on the ground side of the substrate contacts the source electrode of the FET and is spaced from the gate and drain electrodes to form a dome for minimizing ground inductance and maximizing heat transfer from the FET independent of the thickness of the substrate.
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