Dry etching method and method for prevention of low temperature post etch deposit
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United States of America Patent
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Feb 12, 1991
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N/A
app pub date -
Jul 18, 1990
filing date -
Jul 18, 1990
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Abstract
A method of preventing low temperature dry etch deposit on a semiconductor substrate wafer comprises: ceasing injection of reactive gas to within a dry etching reactor at substantial completion of a selective etch while maintaining sufficient power to the reactor to maintain gases therein in a plasma state; and substantially evacuating the reactive gas plasma from the reactor before decreasing power to the reactor below that which is sufficient to maintain gases therein in the plasma state.
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