Low reflectance conductor in an integrated circuit
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United States of America Patent
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-
Feb 5, 1991
Grant Date -
N/A
app pub date -
Sep 8, 1987
filing date -
Sep 8, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A low reflectance conductor for an integrated circuit is disclosed. A layer of refractory metal is disposed over the aluminum alloy or silicide conductors commonly in use in integrated circuits. The layer of refractory metal is then treated in a plasma reactor to form a low reflective layer of refractory metal oxide on the surface.
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