Non-volatile memory cell
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United States of America Patent
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Feb 5, 1991
Grant Date -
N/A
app pub date -
Apr 27, 1989
filing date -
May 13, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The invention relates to an electrically erasable floating-gate memory cell (EEPROM) in which the Fowler-Nordheim tunnel effect is exploited for programming and erasing. In accordance with the invention, a trench adjacent to the side of the drain zone facing away from the channel zone and covered with a dielectric tunnel layer is provided in the semiconductor element, so that the floating-gate electrode extends into the trench in such a way that the tunnel current can flow horizontally to the semiconductor surface between the drain zone and the floating-gate electrode. This permits a reduction in the cell size and to higher integration densities. Preferably the floating gate electrodes of at least two cells extend into a single trench.
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