Emissivity calibration apparatus and method
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Feb 5, 1991
Issued Date -
N/A
app pub date -
Jun 12, 1989
filing date -
Oct 26, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An improved method and apparatus are disclosed for calibrating the emissivity characteristics of a semiconductor wafer within a processing chamber by supporting a sample wafer on a graphite susceptor within the chamber and by comparing the temperature measured within the susceptor in close proximity to the center of the wafer with the temperature measured by the emission of radiation from the surface of the wafer through the walls of the processing chamber. Temperature measurements subsequently made from the radiation emitted from the surface of similar wafers are corrected with reference to the measurement made of the temperature within the susceptor on the sample wafer.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully