Radiation hard memory cell structure with drain shielding
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United States of America Patent
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Jan 29, 1991
Grant Date -
N/A
app pub date -
Sep 5, 1986
filing date -
Sep 5, 1986
priority date (Note) -
Expired
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Abstract
A memory cell structure has a pair of cross-coupled inverters, each inverter having first and second MOS series coupled transistors. Each of the second inverter transistors has a source disposed near the periphery of the cell, a drain disposed closer to the center of the cell than the source thereof, and a channel region disposed between the source and drain. The channel region shields the sensitive drain from radiation generated photocurrents, thereby minimizing the chance of a change in logic state during radiation.
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