Static induction thyristor
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United States of America Patent
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Jan 8, 1991
Issued Date -
N/A
app pub date -
Jul 5, 1988
filing date -
Nov 21, 1980
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A static induction thyristor having a mesh like gate region in front of the cathode, and between the gate region and the cathode a high resistance region having effective impurity concentration of 10.sub.11 cm.sup.-3 -5.times.10.sup.14 cm.sup.-3 is interposed, and the voltage gain decided by the gate length, gate interval and the gate-to-anode distance is made 10 or more so that the forward voltage drop is small, providing high speed switching ability and a large reverse breakdown voltage.
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