Method for producing semiconductive single crystal
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United States of America Patent
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-
Jan 8, 1991
Grant Date -
N/A
app pub date -
Mar 9, 1989
filing date -
Mar 11, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A n-type ZnSe thin layer is prepared by heating a ZnSe signal crystal substrate in a hydrogen atmosphere under a pressure of from 0.1 Torr. to 10 Torr. at a temperature of from 250.degree. C. to 450.degree. C. while supplying a gaseous organozinc compound, H.sub.2 Se gas and a gaseous organoaluminum compound in such amounts that a molar ratio of Se/Zn is from 10 to 100 and a molar ratio of Al/Zn is from 0.02 to 0.07 to grow the aluminum-doped ZnSe thin film on the ZnSe single crystal substrate.
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