NOVRAM cell using two differential decouplable nonvolatile memory elements
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United States of America Patent
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Dec 25, 1990
Grant Date -
N/A
app pub date -
Apr 7, 1989
filing date -
Apr 7, 1989
priority date (Note) -
Expired
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Abstract
A nonvolatile, semiconductor randon access memory cell comprising a static RAM element and a nonvolatile memory element having differential charge storage capabilities is presented. The static RAM and nonvolatile memory elements are interconnected to allow information to be exchanged between two elements, thus allowing the faster static RAM element to serve as the primary memory to the system and allowing the nonvolatile memory element to serve as permanent storage during power-down conditions. In one embodiment, the nonvolatile memory element comprises two electrically erasable PROM devices (EEPROMs). The two EEPROM devices store differential charges corresponding to the complementary outputs of the static RAM element. The nature of the differential charge storage allows lower programming voltages to be used on the EEPROM devices, resulting in increased storage intergrity and increased endurance of the EEPROM devices.
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