Method for recirculating high-temperature etching solution
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United States of America Patent
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Dec 25, 1990
Grant Date -
N/A
app pub date -
Sep 26, 1989
filing date -
Oct 1, 1988
priority date (Note) -
Expired
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Abstract
A method for recirculating a high-temperature etching solution according to the present invention comprises the steps of continuously removing, from a bath for etching a wafer for a semiconductor device, a portion of an etching solution contained in the etching bath, injecting a predetermined amount of pure water for adjusting the concentration of the etching solution into the removed etching solution, heating the resulting solution to a predetermined temperature, and recirculating the heated solution into the etching bath.
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